Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions
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Annealing and oxidation of e.g. | Annealing and oxidation of e.g. | ||
*Wafers with aluminium | * | ||
Wafers with aluminium | |||
*Wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD | *Wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD | ||
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|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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*1-30 4" | *1-30 4" wafers (or 2" wafers) | ||
*1 6" | *1 6" wafer (2 6" wafers with less good uniformity) - Requires training | ||
*Small samples placed on a 6" dummy wafer | *Small samples placed on a 6" dummy wafer - Required traning | ||
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| style="background:LightGrey; color:black"|Substrate materials allowed | | style="background:LightGrey; color:black"|Substrate materials allowed | ||