Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

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Revision as of 09:23, 28 March 2011

Recipe nano1.0
Tool Pegasus
C4F8 (sccm) 52
SF6 (sccm) 38
O2 (sccm) 0
Coil power (W) 800 (forward)
Platen power (W) 50
Pressure (mtorr) 4
Process time (s) 120
Nominal line width Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
Etch rates in zep resist (nm/min)
zep
Images Images