Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

Revision as of 10:47, 22 March 2011

Recipe	nano1.0
Tool	Pegasus
C₄F₈ (sccm)	52
SF₆ (sccm)	38
O₂ (sccm)	0
Coil power (W)	800 (forward)
Platen power (W)	50
Pressure (mtorr)	4
Process time (s)	120
Nominal line width	Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width	Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
	Etch rates in zep resist (nm/min)
zep

@@ Line 1: / Line 1: @@
 {| border="2" cellspacing="1" cellpadding="3" align="center"
 !Recipe
-![[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch|nano1]]
+!nano1.0
 |-
 !Tool
@@ Line 70: / Line 70: @@
 |
 |-
+[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch|Images]]
 |}