Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

From LabAdviser
Newer edit →
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
New page: {| border="2" cellspacing="1" cellpadding="3" align="center" !Recipe !nano1 |- !Tool |Pegasus |- !C<sub>4</sub>F<sub>8</sub> (scc...
 
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
No edit summary
Line 1: Line 1:
{| border="2" cellspacing="1" cellpadding="3" align="center"
{| border="2" cellspacing="1" cellpadding="3" align="center"
!Recipe
!Recipe
Line 14: Line 13:
|-
|-
!O<sub>2</sub> (sccm)
!O<sub>2</sub> (sccm)
|15
|0
|-
|-
! Coil power (W)
! Coil power (W)
Line 27: Line 26:
|-
|-
! Process time (s)
! Process time (s)
|150
|120
|-
|-
! Nominal line width
! Nominal line width
Line 33: Line 32:
|-
|-
! 30 nm
! 30 nm
|198
|
|-
|-
!60 nm
!60 nm
|256
|
|-
|-
!90 nm
!90 nm
|259
|
|-
|-
!120 nm
!120 nm
|277
|
|-
|-
!150 nm
!150 nm
|269
|
|-
|-
! Nominal line width
! Nominal line width
Line 51: Line 50:
|-
|-
!30 nm
!30 nm
|79
|
|-
|-
!60 nm
!60 nm
|102
|
|-
|-
!90 nm
!90 nm
|104
|
|-
|-
!120 nm
!120 nm
|111
|
|-
|-
!150 nm
!150 nm
|108
|
|-
|-
|
|
Line 69: Line 68:
|-
|-
! zep
! zep
|18
|
|-
|-
|}
|}

Revision as of 10:43, 22 March 2011

Recipe nano1
Tool Pegasus
C4F8 (sccm) 52
SF6 (sccm) 38
O2 (sccm) 0
Coil power (W) 800 (forward)
Platen power (W) 50
Pressure (mtorr) 4
Process time (s) 120
Nominal line width Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
Etch rates in zep resist (nm/min)
zep
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch&oldid=4834"