Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

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{| border="2" cellspacing="1" cellpadding="3" align="center"
{| border="2" cellspacing="1" cellpadding="3" align="center"
!Recipe
!Recipe
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!O<sub>2</sub> (sccm)
!O<sub>2</sub> (sccm)
|15
|0
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|-
! Coil power (W)
! Coil power (W)
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! Process time (s)
! Process time (s)
|150
|120
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|-
! Nominal line width
! Nominal line width
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! 30 nm
! 30 nm
|198
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|-
|-
!60 nm
!60 nm
|256
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|-
|-
!90 nm
!90 nm
|259
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|-
|-
!120 nm
!120 nm
|277
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|-
!150 nm
!150 nm
|269
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|-
! Nominal line width
! Nominal line width
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|-
!30 nm
!30 nm
|79
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|-
!60 nm
!60 nm
|102
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|-
!90 nm
!90 nm
|104
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|-
!120 nm
!120 nm
|111
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!150 nm
!150 nm
|108
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! zep
! zep
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Revision as of 10:43, 22 March 2011

Recipe nano1
Tool Pegasus
C4F8 (sccm) 52
SF6 (sccm) 38
O2 (sccm) 0
Coil power (W) 800 (forward)
Platen power (W) 50
Pressure (mtorr) 4
Process time (s) 120
Nominal line width Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
Etch rates in zep resist (nm/min)
zep