Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions
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* Max. | * Max. 100 <sup>o</sup>C/s with carrier wafer or sample wafer | ||
* Max. 50 <sup>o</sup>C/s with SiC-coated graphite susceptor | |||
|style="background:WhiteSmoke; color:black;" align="left"| Different heating rates can be set under temperature control, as well as the step duration. | |style="background:WhiteSmoke; color:black;" align="left"| Different heating rates can be set under temperature control, as well as the step duration. | ||
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