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==Samples and Process Specifications==
==Samples and Process Specifications==
{| border="2" cellspacing="0" cellpadding="2"  
 
{| border="1" cellspacing="3" cellpadding="10"
!Colspan="2" style="background:silver; color:black;" align="center"|Specifics
|style="background:LightGrey; color:black;" align="center"|<b>Range</b>
|style="background:WhiteSmoke; color:black;" align="center"|<b>Comments</b>
|-
!style="background:Silver; color:black" align="center" align="center" rowspan="2"|Temperature
|style="background:Silver; color:black"|Pyro Control
|style="background:LightGrey; color:black"|
* 700 <sup>o</sup>C to 1200 <sup>o</sup>C
|style="background:WhiteSmoke; color:black;" align="left"|The maximum temperature allowed is '''dependent''' on both '''processing type''' and '''time'''.
|-
|-
!style="background:silver; color:black;" align="center"|Purpose
|style="background:Silver; color:black"|Power Control
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|Rapid thermal processor/annealer
* 0% - 100%
|style="background:WhiteSmoke; color:black;" align="left"| '''Power control is NOT ALLOWED for more than 10s.''' Chamber maximum power is '''56 kW'''.
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" align="center" rowspan="4"|Process gas
|style="background:LightGrey; color:black"|Process temperature
|style="background:Silver; color:black"|Ar
|style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|
Annealing temperature:
*Max. 2000 SCCM
*Up to 1200 <sup>o</sup>C, but maximum 450 <sup>o</sup>C for III-V materials
|style="background:WhiteSmoke; color:black;" align="center"|
**Time limits at temperatures above 700 <sup>o</sup>C:
|-
***700 °C: 60 min.
|style="background:Silver; color:black"|O<sub>2
***800 °C: 30 min.
|style="background:LightGrey; color:black"|
***900 °C: 20 min.
*Max. 2000 SCCM
***1000 °C: 10 min.
|style="background:WhiteSmoke; color:black;" align="left"|Limited use.
***1100 °C: 5 min.
|-
***1200 °C: 1 min.
|style="background:Silver; color:black"|NH<sub>3
Temperature ramp:  
|style="background:LightGrey; color:black"|
*Up to 50 <sup>o</sup>C/min with susceptor
*Max. 2000 SCCM
*Up to 100 <sup>o</sup>C/min without susceptor
|style="background:WhiteSmoke; color:black;" align="left"|'''Not connected and not tested'''. No recipes available.
 
|-
|style="background:Silver; color:black"|5% H<sub>2</sub>/Ar
|style="background:LightGrey; color:black"|
*Max. 2000 SCCM
|style="background:WhiteSmoke; color:black;" align="center"|
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Pressure
|style="background:Silver; color:black"|Valve (APC)
|style="background:LightGrey; color:black"|
*0<sup>o</sup> - 90<sup>o</sup>
|style="background:WhiteSmoke; color:black;" align="center"|
|-
|style="background:Silver; color:black"|Controller
|style="background:LightGrey; color:black"|
*Max. 13.3(3) mbar
|style="background:WhiteSmoke; color:black;" align="center"|
|-
!style="background:Silver; color:black" align="center" align="center" rowspan="3"|Process time
(Check image below)
|style="background:Silver; color:black"|At 1200 <sup>o</sup>C
|style="background:LightGrey; color:black"|
*Max. 10 min
|style="background:WhiteSmoke; color:black;" align="center"|
|-
|style="background:Silver; color:black"|At 1100 <sup>o</sup>C
|style="background:LightGrey; color:black"|
*Max. 30 min
|style="background:WhiteSmoke; color:black;" align="left"|
|-
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:Silver; color:black"|At 1000 <sup>o</sup>C
|style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|
*1 atm (atmospheric pressure)
*Max. 60 min
*~ 0 mbar (vacuum) without any gas flow
|style="background:WhiteSmoke; color:black;" align="left"|
|-
!style="background:Silver; color:black" align="center" align="center" rowspan="1"|Heating rate
|style="background:Silver; color:black"|
|style="background:LightGrey; color:black"|
* Max. 150 <sup>o</sup>C/s
|style="background:WhiteSmoke; color:black;" align="left"| Different heating rates can be set under temperature control, as well as the step duration.
|-
|-
|style="background:LightGrey; color:black"|Gases on the system
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:WhiteSmoke; color:black"|
|style="background:Silver; color:black"|Batch size
Process gases:
|style="background:LightGrey; color:black"|
*Nitrogen (N<sub>2</sub>)
*Single-wafer process
*Argon (Ar)
|style="background:WhiteSmoke; color:black;" align="center"|
*Forming gas (4 % H<sub>2</sub>/96 % N<sub>2</sub>) - Not connected yet
Purge gas:  
*Nitrogen (N<sub>2</sub>)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:Silver; color:black"|Substrate size
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Chips on carrier
*One 200 mm wafer (less good temperature uniformity than smaller wafers/samples)
*100 mm or 150 mm wafers
*One 150 mm wafer
|style="background:WhiteSmoke; color:black;" align="left"| '''Small samples''' must be '''placed''' on '''dedicated carrier wafers'''. These '''do not need to and should not be''' bonded to the carriers.
*One 100 mm wafer
*One or more 50 mm wafers (always placed on a susceptor or carrier wafer)
*One or more small samples (always placed on a susceptor or carrier wafer)
|-
|-
|style="background:LightGrey; color:black"|Substrate materials allowed
| style="background:Silver; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|
 
*Silicon
*Silicon  
*Silicon Nitride
*Silicon oxide and silicon nitride  
*Aluminum Oxide
*Fused silica/quartz
|style="background:WhiteSmoke; color:black;" align="left"| During previous testing, '''silicon nitride''' and '''aluminum oxide''' were only used as '''coating/masking materials''' and have been proven capable of sustaining this type of high temperature processing.
*III-V materials - Use a dedicated carrier wafer
*Metals - Use a dedicated carrier wafer and ask for permission
|-  
|-  
|}
|}
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