Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
| Line 213: | Line 213: | ||
File:C10184_12.jpg | File:C10184_12.jpg | ||
File:Contour Plot Y33 EM_0_0 blue to red.jpg| Etch on none patterned wafer, Uniformity: +-1.7% | File:Contour Plot Y33 EM_0_0 blue to red.jpg| Etch on none patterned wafer, Uniformity: +-1.7% | ||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | |||
File:C10381_04.jpg | |||
File:C10381_06.jpg | |||
File:C10381_07.jpg | |||
File:C10381_30dg_17.jpg | |||
File:C10381_30dg_21.jpg | |||
</gallery> | </gallery> | ||