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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
File:C10184_01.jpg
 
File:C10184_05.jpg
File:C10184_05.jpg
File:C10184_07.jpg
File:C10184_07.jpg
File:C10184_09.jpg
File:C10184_09.jpg
File:C10184_11.jpg
 
File:C10184_12.jpg
File:C010184top_04.jpg
File:C010184tilt30plasmaO2_02.jpg
File:C010184top_01.jpg
File:C010184tilt30plasmaO2_01.jpg
File:C010184tilt20plasmaO2_07.jpg
File:C010184tilt20plasmaO2_05.jpg
File:Contour Plot Y33 EM_0_0 blue to red.jpg| Etch on none patterned wafer, Uniformity: +-1.7%
File:Contour Plot Y33 EM_0_0 blue to red.jpg| Etch on none patterned wafer, Uniformity: +-1.7%
</gallery>
</gallery>
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