Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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 <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px">
-File:C09721_center_10.jpg
-File:C09721_center_18.jpg
 File:C09721_center_21.jpg
-File:C09721_center_07.jpg
-File:C09721_center_05.jpg
-File:C09721_center_22.jpg
 </gallery>
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 <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
-File:C10161_01.jpg
 File:C10161_03.jpg
 File:C10161_05.jpg
 File:C10161_07.jpg
-File:C10161_09.jpg
-File:C10161_11.jpg
+File:C010161top_01.jpg
+File:C010161tilt_04.jpg
 </gallery>