Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

@@ Line 70: / Line 70: @@
 **CD loss due to larger mask faceting
 |
+*Sidewall passivation
+**Sample size
+**Platen power
+**Coil power
+**H2 flow
+**O2 flow
+**Total gas flow rate/pressure
 |-
 |}