Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | *100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | ||
===Results=== | ===Results=== | ||
'''Temporary conclusions on how the process parameters affect the results in this study:''' | {| border="2" cellspacing="2" cellpadding="3" | ||
|'''Temporary conclusions on how the process parameters affect the results in this study:''' | |||
|'''What process parameters affect the results?''' | |||
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*Going from full wafer to small piece on Si carrier: | *Going from full wafer to small piece on Si carrier: | ||
**Seemed to give more sidewall passivation | **Seemed to give more sidewall passivation | ||
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**more sidewall bow | **more sidewall bow | ||
**CD loss due to larger mask faceting | **CD loss due to larger mask faceting | ||
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<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | ||