Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | *100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | ||
===Results=== | |||
Temporary conclusions on how the process parameters affect the results in this study | |||
*Going from full wafer to small piece on Si carrier: | |||
**Seemed to give more sidewall passivation | |||
*Platen power: lowering the platen power gives | |||
**more sidewall passivation | |||
**lower etch rate | |||
**Less trenching | |||
*Removing the H2 gave: | |||
**less sidewall passivation | |||
*Adding O2 gave: | |||
**less sidewall passivation | |||
*Process pressure/total gasflow rate | |||
**Reducing total gasflow rate which reduced the pressur inside the chamber gave: | |||
***less sidewall passivation | |||
***Reduced the CD (Critical Dimensions) | |||
*Coil power: Reducing coil power | |||
**CD went up | |||
**more sidewall passivation | |||
*Increasing process time: | |||
**less sidewall passivation | |||
**more sidewall bow | |||
**CD loss due to larger mask faceting | |||
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> |
Revision as of 13:00, 13 October 2023
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
---|---|
Coil Power [W] | 2500 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
H2 flow [sccm] | 25.6 |
C4F8 flow [sccm] | 25.6 |
He flow [sccm] | 448.7 |
Pressure | Fully open APC valve (8-9 mTorr) |
Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN) |
- 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
Results
Temporary conclusions on how the process parameters affect the results in this study
- Going from full wafer to small piece on Si carrier:
- Seemed to give more sidewall passivation
- Platen power: lowering the platen power gives
- more sidewall passivation
- lower etch rate
- Less trenching
- Removing the H2 gave:
- less sidewall passivation
- Adding O2 gave:
- less sidewall passivation
- Process pressure/total gasflow rate
- Reducing total gasflow rate which reduced the pressur inside the chamber gave:
- less sidewall passivation
- Reduced the CD (Critical Dimensions)
- Reducing total gasflow rate which reduced the pressur inside the chamber gave:
- Coil power: Reducing coil power
- CD went up
- more sidewall passivation
- Increasing process time:
- less sidewall passivation
- more sidewall bow
- CD loss due to larger mask faceting
- SiO2 etch with Cr mask on full wafer 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W