Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
No edit summary |
No edit summary |
||
| Line 137: | Line 137: | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | ||
File:C10119_01.jpg | |||
File:C10119_03.jpg | |||
File:C10119_05.jpg | |||
File:C10119_06.jpg | |||
File:C10119_08.jpg | File:C10119_08.jpg | ||
File:C10119_09.jpg | File:C10119_09.jpg | ||
File:C10119_11.jpg | File:C10119_11.jpg | ||
</gallery> | </gallery> | ||