Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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Line 14: Line 14:
!Sinano3.6
!Sinano3.6
|-
|-
!Cl<sub>2</sub>
!Cl<sub>2</sub> (sccm)
|0
|0
|0
|0
Line 24: Line 24:
|15
|15
|-
|-
!BCl<sub>3</sub>
!BCl<sub>3</sub> (sccm)
|5
|5
|3
|3
Line 34: Line 34:
|5
|5
|-
|-
!HBr
!HBr (sccm)
|15
|15
|17
|17
Line 44: Line 44:
|0
|0
|-
|-
! Coil power (W)
|900
|900
|900
|900
|900
|900
|900
|900
|-
!Platen power (W)
|50
|50
|60
|75
|90
|60
|60
|60
|-
! Process time (s)
|150
|180
|120
|180
|120
|90
|120
|180
|}
|}


Revision as of 10:04, 16 March 2011

This page is under construction

Etching of nanostructures in silicon using the ICP Metal Etcher

Sinano3.0 Sinano3.1 Sinano3.2 Sinano3.3 Sinano3.4 Sinano4.0 Sinano3.5 Sinano3.6
Cl2 (sccm) 0 0 0 0 0 20 15 15
BCl3 (sccm) 5 3 5 5 5 0 5 5
HBr (sccm) 15 17 15 15 15 0 0 0
Coil power (W) 900 900 900 900 900 900 900 900
Platen power (W) 50 50 60 75 90 60 60 60
Process time (s) 150 180 120 180 120 90 120 180




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