Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions
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{| border="2" cellspacing="1" cellpadding="3" align="center" | {| border="2" cellspacing="1" cellpadding="3" align="center" | ||
! | ! | ||
! | !Sinano3.0 | ||
! | !Sinano3.1 | ||
!Sinano3.2 | |||
!Sinano3.3 | |||
!Sinano3.4 | |||
!Sinano4.0 | |||
!Sinano3.5 | |||
!Sinano3.6 | |||
|- | |- | ||
!Cl<sub>2</sub> | |||
|0 | |||
|0 | |||
|0 | |||
|0 | |||
|0 | |||
|20 | |||
|15 | |||
|15 | |||
| | |||
| | |||
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|- | |- | ||
|} | |} |
Revision as of 09:52, 16 March 2011
This page is under construction
Etching of nanostructures in silicon using the ICP Metal Etcher
Sinano3.0 | Sinano3.1 | Sinano3.2 | Sinano3.3 | Sinano3.4 | Sinano4.0 | Sinano3.5 | Sinano3.6 | |
---|---|---|---|---|---|---|---|---|
Cl2 | 0 | 0 | 0 | 0 | 0 | 20 | 15 | 15 |