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Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions

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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,794 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,794 edits
Line 370: Line 370:
|-style="background:whitesmoke; color:black"
|-style="background:whitesmoke; color:black"
!AZ MiR 701
!AZ MiR 701
|2021-06-23<br>elkh
|2023-09-26<br>taran
|1.5 µm
|1.5 µm
|150 mJ/cm<sup>2</sup>
|150 mJ/cm<sup>2</sup>
(13.5s @ 11mW/cm<sup>2</sup>)
|Single puddle, 60 s
|Single puddle, 60 s
|PEB: 60 s @ 110°C
|PEB: 60 s @ 110°C
Line 380: Line 381:
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!AZ nLOF 2020
!AZ nLOF 2020
|Long ago
|2023-09-26<br>taran
|1.5 µm
|2 µm
|104 mJ/cm<sup>2</sup>
|121 mJ/cm<sup>2</sup>
|Single puddle, 30 s
(11 s @ 11 mW/cm<sup>2</sup>)
|PEB: 60 s @ 110°C<br>Use 60 s development for lift-off
|Single puddle, 60 s
|PEB: 60 s @ 110°C<br>60 s development for lift-off
|-
|-


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