Specific Process Knowledge/Characterization: Difference between revisions
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| width="50" align="center" style="background:#f0f0f0;"|'''IR-camera''' | | width="50" align="center" style="background:#f0f0f0;"|'''IR-camera''' | ||
| width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]''' | | width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]''' | ||
| width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)| | | width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|Microspectrophotometer (Craic 20/30 PV)]]''' | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Breakdown voltage | |align="left"| Breakdown voltage | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Carrier density/doping profile | |align="left"| Carrier density/doping profile | ||
||||||||||||||||||||||||||||||||||||||x | ||||||||||||||||||||||||||||||||||||||x| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x|||||||||| | |align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x|||||||| | |align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Deposition uniformity||||||||||x||x||x|||||||||||||||||||||||| | |align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x|||||||||||||||||||||||||||| | |align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||x | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x|||||||||||||||||||||||||||| | |align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Electrical conductivity||||||||||||||||||||||||x|||||||||||||| | |align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x 4)||||||x 4)|||||||||||| | |align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x 4)||||||x 4)||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x 7)|||||||||||| | |align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x 7)||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x|||||||||||||||||||||||||||| | |align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||x | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x|||||| | |align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Band gap||||||||||||||x||||x||x|||||||||||||||||| | |align="left"| Band gap||||||||||||||x||||x||x||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x|||| | |align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||x | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Phase changes|||||||||||||||||||||||||||||||||||||| | |align="left"| Phase changes||||||||||||||||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Reflectivity||||||||||||x||x||||||x 6)|||||||||||||||||| | |align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||x | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x|||||||||||||||||||||||| | |align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Resistivity||||||||||||||||||||||x|||||||||||||||| | |align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Step coverage||x 1)||x 1)|||||||||||||||||||||||||||||||||| | |align="left"| Step coverage||x 1)||x 1)||||||||||||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x|||||||||||| | |align="left"| Surface roughness||||||x||x||x||||||||||||||||x||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Thermal conductivity|||||||||||||||||||||||||||||||||||||| | |align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x 1)||x 1)||x 2)||x 2)||x ||x||x||||||x 5)||x 3)||||x|||||||||||| | |align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x 1)||x 1)||x 2)||x 2)||x ||x||x||||||x 5)||x 3)||||x||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x|| | |align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x 1)||x 1)||||||||||||x|||||||||||||||||||||| | |align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x 1)||x 1)||||||||||||x||||||||||||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Work function||||||||||||||||||x|||||||||||||||||||| | |align="left"| Work function||||||||||||||||||x||||||||||||||||||||| | ||
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Revision as of 11:41, 22 September 2023
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Unless otherwise stated, this page is written by DTU Nanolab internal
Overview of characteristics and where to measure it
Optical Micro- scopes | SEM (incl. EDX) | AFM | Stylus profiler | Optical profiler | Filmtek (reflec- tometer) | Ellip- someter | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Particle scanner | IR-camera | III-V ECV-profiler | Microspectrophotometer (Craic 20/30 PV) | |
Breakdown voltage | ||||||||||||||||||||
Carrier density/doping profile | x| | |||||||||||||||||||
Charge carrier life time | x | |||||||||||||||||||
Contact angle hydrophobic/hydrophillic | x | |||||||||||||||||||
Crystallinity | x | |||||||||||||||||||
Deposition uniformity | x | x | x | |||||||||||||||||
Dimensions(in plane) | x | x | (x) | (x) | x | x | ||||||||||||||
Dimensions(height)/Topography | (x) | (x) | x | x | x | |||||||||||||||
Electrical conductivity | x | |||||||||||||||||||
Element analysis | x | x | x 4) | x 4) | ||||||||||||||||
Film stress | x | x 7) | ||||||||||||||||||
Imaging | x | x | x | x | x | |||||||||||||||
Material Hardness | x | |||||||||||||||||||
Band gap | x | x | x | |||||||||||||||||
Particles | x | x | x | x | x | |||||||||||||||
Phase changes | ||||||||||||||||||||
Reflectivity | x | x | x 6) | x | ||||||||||||||||
Refractive index | x | x | ||||||||||||||||||
Resistivity | x | |||||||||||||||||||
Step coverage | x 1) | x 1) | ||||||||||||||||||
Surface roughness | x | x | x | x | ||||||||||||||||
Thermal conductivity | ||||||||||||||||||||
Thin film thickness | x 1) | x 1) | x 2) | x 2) | x | x | x | x 5) | x 3) | x | ||||||||||
Voids in wafer bonding | x | x | x | |||||||||||||||||
Wafer thickness | x 1) | x 1) | x | |||||||||||||||||
Work function | x |
- Using the cross section method
- Using the create step method
- With known resistivity
- Composition information for crystalline materials
- Only single layer
- Good for characterization of VCSEL structures and DBR mirrors
- Only for crystalline films
Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Hardness measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
- X-ray diffraction
Choose equipment
AFM
Electrical measurements
- 4-Point Probe
- Probe station
- III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)
Element analysis
Optical and stylus profilers
- Optical Profiler (Sensofar)
- Dektak XTA stylus profiler
- P17 stylus profiler from KLA-Tencor
- Dektak 3ST stylus profiler
- Stylus Profiler:Dektak150
Optical microscopes
Optical characterization
SEMs at DTU Nanolab - building 307/314
SEM's in building 346
TEMs at DTU Nanolab - building 307/314
XRD
- XRD Powder, tabletop XRD for Bregg-Brentano measurements of powders
- XRD SmartLab, advanced multipurpose instrument in the cleanroom