Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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<gallery caption=" | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | ||
File:C09721_center_10.jpg | File:C09721_center_10.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px"> | ||
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</gallery> | </gallery> | ||
<gallery caption=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px"> | ||
File:C10025_03__11.jpg | File:C10025_03__11.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px"> | ||
File:C10026_03__05.jpg | File:C10026_03__05.jpg | ||
File:C10026_03__03.jpg | File:C10026_03__03.jpg | ||
Revision as of 13:02, 21 September 2023
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
| Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
|---|---|
| Coil Power [W] | 2500 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 20 |
| H2 flow [sccm] | 25.6 |
| C4F8 flow [sccm] | 25.6 |
| He flow [sccm] | 448.7 |
| Pressure | Fully open APC valve (8-9 mTorr) |
| Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '2 A' / '30 A' |
- SiO2 etch with Cr mask on full wafer 6 min etch
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
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- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
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