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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
!Parameter
!Start parameters, variations noted in the gallery headline
|Recipe name: '''no 10 with lower platen power'''
|Recipe name: '''no 10 with lower platen power'''
    
    

Revision as of 12:59, 21 September 2023

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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab

Start parameters, variations noted in the gallery headline Recipe name: no 10 with lower platen power
Coil Power [W] 2500
Platen Power [W] 200
Platen temperature [oC] 20
H2 flow [sccm] 25.6
C4F8 flow [sccm] 25.6
He flow [sccm] 448.7
Pressure Fully open APC valve (8-9 mTorr)
Electromagnetic coils (EM) 'outer coil' / 'inner coil' '0-10 A' / '0-30 A'
  • EM tests with Cr mask on full wafer 6 min etch
  • EM tests with Cr mask on wafer piece on Si carrier 6 min etch
  • EM tests with Cr mask on full wafer 6 min etch
  • EM tests with Cr mask on full wafer 6 min etch
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