Revision as of 15:40, 11 November 2024

Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

DREM 2kW runs on complete set of Travka 5 to 80 % wafers

Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

DREM 2kW runs on complete set of Travka 5 to 80 % wafers

DREM response to variations is trench widths and etch loads

Date

Substrate information

Process information

Wafer info

Mask/exposed area

Tool

Conditioning

Recipe

Wafer ID

Comments

27/4-2020

Travka05 wafer

Si / 5%

Peg 1

S022327 DREM 2kW RF MU runs

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022328

Resist etch rate: 62 nm/min Process log entry

SEM image:	a060	a059	a058	a057	a056	a055	a054	a053	a052	a051	a050	a049
Trench width (um)	2.08	3.1	4.2	6.08	10.22	15.27	25.26	39.7	50.5	99.82	150.09	299.56
Etched depth (um)	22.96	27.05	28.46	31.57	35.48	37.96	40.7	42.39	43.24	44.09	44.54	44.56
Etch rate (um/min)	2.09	2.46	2.59	2.87	3.23	3.45	3.7	3.85	3.93	4.01	4.05	4.05
Etch rate (nm/cyc)	153	180	190	210	237	253	271	283	288	294	297	297
Sidewall bowing (%)	0.1	0.6	0.2	0.6	0.1	0.2	-0.1	0.2	-0.4	-0.3	-0.3	-1.1
Sidewall angle (degs)	90.85	90.98	90.94	91.18	91.45	91.4	91.68	92.02	91.78	92.3	92.53	92.35
Bottom bowing (%)	16.93	14.87	20.32	20.1	19.02	17.6	14.71	13.78	10.7	6.84	4.53	2.34
Aspect ratio	9.5	7.61	6.12	4.71	3.2	2.35	1.54	1.03	0.84	0.43	0.29	0.15

27/4-2020

Travka10 wafer,

Si / 10%

Peg 1

S022328 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022329

Resist etch rate: 60 nm/min Process log entry

SEM image:	a061	a062	a063	a064	a065	a066	a067	a068	a069	a070	a071	a072
Trench width (um)	1.78	2.88	4.24	5.78	10.22	15.36	25.48	40.51	75.63	100.86	200.75	299.63
Etched depth (um)	21.26	24.82	27.54	31.1	35.34	38.21	41.17	42.98	44.58	45.15	45.16	44.68
Etch rate (um/min)	1.93	2.26	2.5	2.83	3.21	3.47	3.74	3.91	4.05	4.1	4.11	4.06
Etch rate (nm/cyc)	142	165	184	207	236	255	274	287	297	301	301	298
Sidewall bowing (%)	-0.2	0.2	-0.1	0.2	-0.2	-0.4	-0.2	-0.8	-0.6	-0.7	-1.3	-1.4
Sidewall angle (degs)	90.47	90.61	90.35	90.98	90.78	91.08	91.11	91.43	91.97	91.55	92.07	92.37
Bottom bowing (%)	26.03	15.16	18.16	17.1	17.51	17.21	15.48	13.54	8.58	6.93	3.43	2.43
Aspect ratio	10.89	7.92	6.26	4.94	3.31	2.38	1.57	1.04	0.58	0.44	0.22	0.15

27/4-2020

Travka20 wafer

Si / 20

Peg 1

S022329 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022330

Resist etch rate: 59 nm/min Process log entry

SEM image:	a086	a085	a084	a083	a082	a081	a080	a078	a077	a076	a075	a074	a073
Trench width (um)	1.91	3.04	3.68	5.89	10.08	15.02	40.03	49.99	75.51	100.03	148.99	199.75	298.84
Etched depth (um)	21.58	24.69	26.33	29.81	33.68	36.25	40.32	40.95	41.68	41.77	41.84	42.1	41.82
Etch rate (um/min)	1.96	2.24	2.39	2.71	3.06	3.3	3.67	3.72	3.79	3.8	3.8	3.83	3.8
Etch rate (nm/cyc)	144	165	176	199	225	242	269	273	278	278	279	281	279
Sidewall bowing (%)	0.2	0.4	0.3	0.4	0.4	0.1	-0.1	-0.5	-0.6	-0.5	-0.6	-0.8	-0.3
Sidewall angle (degs)	90.77	90.91	90.93	91.14	91.39	91.49	91.66	91.91	91.96	92.38	92.57	92.96	93.05
Bottom bowing (%)	23.69	15.29	19.28	16.95	17.41	17.41	12.51	11.52	8.37	6.7	4.3	3.23	2.03
Aspect ratio	9.8	7.2	6.42	4.6	3.1	2.28	0.98	0.8	0.54	0.41	0.28	0.21	0.14

27/4-2020

Travka35 wafer

Si / 35%

Peg 1

S022330 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022331

Resist etch rate: 66 nm/min Process log entry

SEM image:	a087	a088	a089	a090	a091	a092	a093	a094	a095	a096	a097
Trench width (um)	1.61	2.71	3.71	7.69	9.87	15.04	25.1	40.03	75.03	199.26	299.66
Etched depth (um)	18.41	22.24	24.41	29.54	31.11	33.55	35.77	37.1	37.96	38.18	38.24
Etch rate (um/min)	1.67	2.02	2.22	2.69	2.83	3.05	3.25	3.37	3.45	3.47	3.48
Etch rate (nm/cyc)	123	148	163	197	207	224	238	247	253	255	255
Sidewall bowing (%)	-0.2	0.1	0.1	0.4	0.2	0.1	-0.3	-0.2	-0.5	-1.1	-1.2
Sidewall angle (degs)	90.33	90.75	90.89	91.13	91.07	91.31	91.34	91.69	91.84	92.49	92.44
Bottom bowing (%)	24.26	20.15	19.99	19.05	17.3	16.29	16.68	13.21	7.68	3.61	2.18
Aspect ratio	10.7	7.42	5.99	3.58	2.98	2.13	1.38	0.9	0.5	0.19	0.13

27/4-2020

Travka50 wafer

Si / 50%

Peg 1

S022331 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022332

Resist etch rate: 58 nm/min Process log entry

SEM image:	a110	a109	a108	a107	a106	a105	a103	a102	a101	a099	a098
Trench width (um)	1.69	2.57	3.68	7.62	14.53	39.96	49.94	100.08	199.63	298.35	299.12
Etched depth (um)	17.88	20.47	22.58	27.07	30.78	33.82	34.11	34.67	34.66	34.26	34.54
Etch rate (um/min)	1.63	1.86	2.05	2.46	2.8	3.07	3.1	3.15	3.15	3.11	3.14
Etch rate (nm/cyc)	119	136	151	180	205	225	227	231	231	228	230
Sidewall bowing (%)	0.1	0.1	0.1	0.2	0.2	-0.5	-0.3	-0.8	-0.7	-2	-1.5
Sidewall angle (degs)	90.58	90.8	90.9	91.17	91.56	91.68	91.62	92.08	92.15	93.34	92.48
Bottom bowing (%)	24.2	20.91	19.84	16.14	17.61	12.38	10.43	5.77	3.26	1.83	1.96
Aspect ratio	9.58	7.18	5.61	3.32	2.01	0.83	0.67	0.34	0.17	0.11	0.11

27/4-2020

Travka65 wafer

Si / 65%

Peg 1

S022332 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022333

Resist etch rate: 58 nm/min Process log entry

SEM image:	a111	a112	a113	a114	a115	a116	a117	a118	a119	a120	a121	a122	a123	a124
Trench width (um)	2.5	3.42	5.44	7.37	9.37	14.4	24.44	39.54	74.69	100.04	150.41	199.78	299.94	301.31
Etched depth (um)	18.9	20.55	23.1	24.82	26.16	28.28	30.04	31.02	31.45	30.89	31.28	30.52	31.47	31.59
Etch rate (um/min)	1.72	1.87	2.1	2.26	2.38	2.57	2.73	2.82	2.86	2.81	2.84	2.77	2.86	2.87
Etch rate (nm/cyc)	126	137	154	165	174	189	200	207	210	206	209	203	210	211
Sidewall bowing (%)	0	0.1	0.2	0.1	0.2	0.4	0.2	-0.3	-0.7	-1.4	-0.7	-0.8	-0.9	-1
Sidewall angle (degs)	90.75	90.75	90.96	91.03	91.19	91.48	91.42	91.86	91.99	91.88	91.81	92.79	92.54	92.34
Bottom bowing (%)	18.3	18.42	16.33	16.3	16.79	18.16	14.77	11.67	6.69	4.18	3.28	1.66	1.42	1.93
Aspect ratio	6.89	5.58	3.97	3.18	2.64	1.87	1.2	0.77	0.42	0.31	0.21	0.15	0.1	0.1

27/4-2020

Travka80 wafer

Si / 80%

Peg 1

S022333 + 1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW nano, 150 cycles or 11:00 minutes

S022334

Resist etch rate: 79 nm/min Process log entry

SEM image:	a136	a135	a134	a133	a126	a125	a132	a131	a130	a129	a128	a127
Trench width (um)	5.51	9.61	14.79	24.6	24.8	25.02	49.42	74.63	99.55	199.49	299.49	299.54
Etched depth (um)	21.45	24.21	25.99	27.45	27.15	27.35	28.03	28.38	28.48	28.23	28.52	29.16
Etch rate (um/min)	1.95	2.2	2.36	2.5	2.47	2.49	2.55	2.58	2.59	2.57	2.59	2.65
Etch rate (nm/cyc)	143	161	173	183	181	182	187	189	190	188	190	194
Sidewall bowing (%)	0.4	0.4	0.3	-0.3	-0.1	-0.6	-0.6	-0.7	-0.5	-1	-0.3	-1.2
Sidewall angle (degs)	90.95	91.1	91.34	91.44	91.19	91.14	91.35	91.86	91.65	92.32	91.7	92.54
Bottom bowing (%)	13.55	16.66	16.02	14.8	13.59	14.6	8.88	5.86	4.36	2.14	1.84	1.96
Aspect ratio	3.66	2.41	1.69	1.09	1.07	1.07	0.56	0.38	0.28	0.14	0.09	0.1

Date

Substrate Information

Process Information

Results

Wafer info

Material/ Exposed area

Condi- tioning

Recipe

Wafer ID

Comments

Picoscope

Numbers

27/4-2020

Travka05 wafer,

Si / 5%

S022327 DREM 2kW RF MU runs

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022328

Resist etch rate: 62 nm/min Process log entry

SEM image:	a060	a059	a058	a057	a056	a055	a054	a053	a052	a051	a050	a049
Trench width (um)	2.08	3.1	4.2	6.08	10.22	15.27	25.26	39.7	50.5	99.82	150.09	299.56
Etched depth (um)	22.96	27.05	28.46	31.57	35.48	37.96	40.7	42.39	43.24	44.09	44.54	44.56
Etch rate (um/min)	2.09	2.46	2.59	2.87	3.23	3.45	3.7	3.85	3.93	4.01	4.05	4.05
Etch rate (nm/cyc)	153	180	190	210	237	253	271	283	288	294	297	297
Sidewall bowing (%)	0.1	0.6	0.2	0.6	0.1	0.2	-0.1	0.2	-0.4	-0.3	-0.3	-1.1
Sidewall angle (degs)	90.85	90.98	90.94	91.18	91.45	91.4	91.68	92.02	91.78	92.3	92.53	92.35
Bottom bowing (%)	16.93	14.87	20.32	20.1	19.02	17.6	14.71	13.78	10.7	6.84	4.53	2.34
Aspect ratio	9.5	7.61	6.12	4.71	3.2	2.35	1.54	1.03	0.84	0.43	0.29	0.15

.

27/4-2020

Travka10 wafer,

Si / 10%

S022328 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022329

Resist etch rate: 60 nm/min Process log entry

SEM image:	a061	a062	a063	a064	a065	a066	a067	a068	a069	a070	a071	a072
Trench width (um)	1.78	2.88	4.24	5.78	10.22	15.36	25.48	40.51	75.63	100.86	200.75	299.63
Etched depth (um)	21.26	24.82	27.54	31.1	35.34	38.21	41.17	42.98	44.58	45.15	45.16	44.68
Etch rate (um/min)	1.93	2.26	2.5	2.83	3.21	3.47	3.74	3.91	4.05	4.1	4.11	4.06
Etch rate (nm/cyc)	142	165	184	207	236	255	274	287	297	301	301	298
Sidewall bowing (%)	-0.2	0.2	-0.1	0.2	-0.2	-0.4	-0.2	-0.8	-0.6	-0.7	-1.3	-1.4
Sidewall angle (degs)	90.47	90.61	90.35	90.98	90.78	91.08	91.11	91.43	91.97	91.55	92.07	92.37
Bottom bowing (%)	26.03	15.16	18.16	17.1	17.51	17.21	15.48	13.54	8.58	6.93	3.43	2.43
Aspect ratio	10.89	7.92	6.26	4.94	3.31	2.38	1.57	1.04	0.58	0.44	0.22	0.15

.

27/4-2020

Travka20 wafer,

Si / 20%

S022329 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022330

Resist etch rate: 59 nm/min Process log entry

SEM image:	a086	a085	a084	a083	a082	a081	a080	a078	a077	a076	a075	a074	a073
Trench width (um)	1.91	3.04	3.68	5.89	10.08	15.02	40.03	49.99	75.51	100.03	148.99	199.75	298.84
Etched depth (um)	21.58	24.69	26.33	29.81	33.68	36.25	40.32	40.95	41.68	41.77	41.84	42.1	41.82
Etch rate (um/min)	1.96	2.24	2.39	2.71	3.06	3.3	3.67	3.72	3.79	3.8	3.8	3.83	3.8
Etch rate (nm/cyc)	144	165	176	199	225	242	269	273	278	278	279	281	279
Sidewall bowing (%)	0.2	0.4	0.3	0.4	0.4	0.1	-0.1	-0.5	-0.6	-0.5	-0.6	-0.8	-0.3
Sidewall angle (degs)	90.77	90.91	90.93	91.14	91.39	91.49	91.66	91.91	91.96	92.38	92.57	92.96	93.05
Bottom bowing (%)	23.69	15.29	19.28	16.95	17.41	17.41	12.51	11.52	8.37	6.7	4.3	3.23	2.03
Aspect ratio	9.8	7.2	6.42	4.6	3.1	2.28	0.98	0.8	0.54	0.41	0.28	0.21	0.14

.

27/4-2020

Travka35 wafer,

Si / 35%

S022330 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022331

Resist etch rate: 66 nm/min Process log entry

SEM image:	a087	a088	a089	a090	a091	a092	a093	a094	a095	a096	a097
Trench width (um)	1.61	2.71	3.71	7.69	9.87	15.04	25.1	40.03	75.03	199.26	299.66
Etched depth (um)	18.41	22.24	24.41	29.54	31.11	33.55	35.77	37.1	37.96	38.18	38.24
Etch rate (um/min)	1.67	2.02	2.22	2.69	2.83	3.05	3.25	3.37	3.45	3.47	3.48
Etch rate (nm/cyc)	123	148	163	197	207	224	238	247	253	255	255
Sidewall bowing (%)	-0.2	0.1	0.1	0.4	0.2	0.1	-0.3	-0.2	-0.5	-1.1	-1.2
Sidewall angle (degs)	90.33	90.75	90.89	91.13	91.07	91.31	91.34	91.69	91.84	92.49	92.44
Bottom bowing (%)	24.26	20.15	19.99	19.05	17.3	16.29	16.68	13.21	7.68	3.61	2.18
Aspect ratio	10.7	7.42	5.99	3.58	2.98	2.13	1.38	0.9	0.5	0.19	0.13

.

27/4-2020

Travka50 wafer,

Si / 50%

S022331 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022332

Resist etch rate: 58 nm/min Process log entry

SEM image:	a110	a109	a108	a107	a106	a105	a103	a102	a101	a099	a098
Trench width (um)	1.69	2.57	3.68	7.62	14.53	39.96	49.94	100.08	199.63	298.35	299.12
Etched depth (um)	17.88	20.47	22.58	27.07	30.78	33.82	34.11	34.67	34.66	34.26	34.54
Etch rate (um/min)	1.63	1.86	2.05	2.46	2.8	3.07	3.1	3.15	3.15	3.11	3.14
Etch rate (nm/cyc)	119	136	151	180	205	225	227	231	231	228	230
Sidewall bowing (%)	0.1	0.1	0.1	0.2	0.2	-0.5	-0.3	-0.8	-0.7	-2	-1.5
Sidewall angle (degs)	90.58	90.8	90.9	91.17	91.56	91.68	91.62	92.08	92.15	93.34	92.48
Bottom bowing (%)	24.2	20.91	19.84	16.14	17.61	12.38	10.43	5.77	3.26	1.83	1.96
Aspect ratio	9.58	7.18	5.61	3.32	2.01	0.83	0.67	0.34	0.17	0.11	0.11

.

27/4-2020

Travka65 wafer,

Si / 65%

S022332 +1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes

S022333

Resist etch rate: 58 nm/min Process log entry

SEM image:	a111	a112	a113	a114	a115	a116	a117	a118	a119	a120	a121	a122	a123	a124
Trench width (um)	2.5	3.42	5.44	7.37	9.37	14.4	24.44	39.54	74.69	100.04	150.41	199.78	299.94	301.31
Etched depth (um)	18.9	20.55	23.1	24.82	26.16	28.28	30.04	31.02	31.45	30.89	31.28	30.52	31.47	31.59
Etch rate (um/min)	1.72	1.87	2.1	2.26	2.38	2.57	2.73	2.82	2.86	2.81	2.84	2.77	2.86	2.87
Etch rate (nm/cyc)	126	137	154	165	174	189	200	207	210	206	209	203	210	211
Sidewall bowing (%)	0	0.1	0.2	0.1	0.2	0.4	0.2	-0.3	-0.7	-1.4	-0.7	-0.8	-0.9	-1
Sidewall angle (degs)	90.75	90.75	90.96	91.03	91.19	91.48	91.42	91.86	91.99	91.88	91.81	92.79	92.54	92.34
Bottom bowing (%)	18.3	18.42	16.33	16.3	16.79	18.16	14.77	11.67	6.69	4.18	3.28	1.66	1.42	1.93
Aspect ratio	6.89	5.58	3.97	3.18	2.64	1.87	1.2	0.77	0.42	0.31	0.21	0.15	0.1	0.1

.

27/4-2020

Travka80 wafer,

Si / 80%

S022333 + 1min TDESC clean

nanolab/ jmli / DREM / DREM 2kW nano, 150 cycles or 11:00 minutes

S022334

Resist etch rate: 79 nm/min Process log entry

SEM image:	a136	a135	a134	a133	a126	a125	a132	a131	a130	a129	a128	a127
Trench width (um)	5.51	9.61	14.79	24.6	24.8	25.02	49.42	74.63	99.55	199.49	299.49	299.54
Etched depth (um)	21.45	24.21	25.99	27.45	27.15	27.35	28.03	28.38	28.48	28.23	28.52	29.16
Etch rate (um/min)	1.95	2.2	2.36	2.5	2.47	2.49	2.55	2.58	2.59	2.57	2.59	2.65
Etch rate (nm/cyc)	143	161	173	183	181	182	187	189	190	188	190	194
Sidewall bowing (%)	0.4	0.4	0.3	-0.3	-0.1	-0.6	-0.6	-0.7	-0.5	-1	-0.3	-1.2
Sidewall angle (degs)	90.95	91.1	91.34	91.44	91.19	91.14	91.35	91.86	91.65	92.32	91.7	92.54
Bottom bowing (%)	13.55	16.66	16.02	14.8	13.59	14.6	8.88	5.86	4.36	2.14	1.84	1.96
Aspect ratio	3.66	2.41	1.69	1.09	1.07	1.07	0.56	0.38	0.28	0.14	0.09	0.1

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