Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
No edit summary |
No edit summary |
||
| Line 7: | Line 7: | ||
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching== | ||
{{CC-bghe2}}<br> | |||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Parameter | !Parameter | ||
Revision as of 12:28, 22 August 2023
Feedback to this page:
click here
This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated
Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching
Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
| Parameter | Recipe name: SiO2_res_10 | Recipe name: DOE2/Post_II_21 |
|---|---|---|
| Coil Power [W] | 2500 | 3840 |
| Platen Power [W] | 300 | 300 |
| Platen temperature [oC] | 20 | 20 |
| H2 flow [sccm] | 25.6 | 0 |
| He flow [sccm] | 448.7 | 0 |
| C4F8 flow [sccm] | 25.6 | 30 |
| Pressure [mTorr] | 8.8 | 0.9 |
| Typical results | SiO2_res_10 | DOE2/Post_II_21 |
|---|---|---|
| Average etch of SRN on 6" wafer | 166 nm/min [+- 17% over a 6" wafer] | 142 nm/min [+- 9% over a 6" wafer] |
| Etch rate of Si3N4 | ? | ? |
| Etch rate of SiO2 | 250 nm/min [+- 3% over a 6" wafer] | 306 nm/min [on small piece] |
| Etch rate in Si | ?nm/min | ? nm/min |
| Etch rate of Mir resist | ? nm/min | ? nm/min |
Etch rate uniformity
- SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers
-
-
