Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
| Line 18: | Line 18: | ||
|Coil Power [W] | |Coil Power [W] | ||
|2500 | |2500 | ||
| | |3840 | ||
|- | |- | ||
|Platen Power [W] | |Platen Power [W] | ||
|300 | |300 | ||
| | |300 | ||
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|H2 flow [sccm] | |H2 flow [sccm] | ||
|25.6 | |25.6 | ||
| | |0 | ||
|- | |- | ||
|He flow [sccm] | |He flow [sccm] | ||
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|Pressure [mTorr] | |Pressure [mTorr] | ||
|8.8 | |8.8 | ||
| | |0.9 | ||
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Revision as of 11:33, 22 August 2023
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Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching
| Parameter | Recipe name: SiO2_res_10 | Recipe name: DOE2/Post_II_21 |
|---|---|---|
| Coil Power [W] | 2500 | 3840 |
| Platen Power [W] | 300 | 300 |
| Platen temperature [oC] | 20 | 20 |
| H2 flow [sccm] | 25.6 | 0 |
| He flow [sccm] | 448.7 | 0 |
| C4F8 flow [sccm] | 25.6 | 30 |
| Pressure [mTorr] | 8.8 | 0.9 |
| Typical results | SiO2_res_10 | DOE2/Post_II_21 |
|---|---|---|
| Etch of SRN | ~43nm/min [measured 39-50 nm/min over a 6" wafer] | 23-25 nm/min [4" on carrier]] |
| Etch rate of Si3N4 | ~49 nm/min [4" on carrier] | 24-26 nm/min [4" on carrier] |
| Etch rate of SiO2 | ~42nm/min [41-43 nm/min over a 6" wafer] | 13.7-14.7 nm/min [4" on carrier] |
| Etch rate in Si | ñm/min | 11-13 nm/min (10% load, 4" wafer on 6" carrier) |
| Etch rate of Mir resist | ~nm/min | ~17 nm/min |
| Tested etch time without burning the resist | 3 min (6 min => resist burned) | 30 min |
| Profile [o] |