Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
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| Line 18: | Line 18: | ||
|Coil Power [W] | |Coil Power [W] | ||
|2500 | |2500 | ||
| | |3840 | ||
|- | |- | ||
|Platen Power [W] | |Platen Power [W] | ||
|300 | |300 | ||
| | |300 | ||
|- | |- | ||
| Line 33: | Line 33: | ||
|H2 flow [sccm] | |H2 flow [sccm] | ||
|25.6 | |25.6 | ||
| | |0 | ||
|- | |- | ||
|He flow [sccm] | |He flow [sccm] | ||
| Line 47: | Line 47: | ||
|Pressure [mTorr] | |Pressure [mTorr] | ||
|8.8 | |8.8 | ||
| | |0.9 | ||
|- | |- | ||