Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4: Difference between revisions
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[[Image:Peg3and4 front 2.JPG |frame| | [[Image:Peg3and4 front 2.JPG |frame|right|x300px|The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations, {{photo1}}]] | ||
'''The user manual and contact information can be found in LabManager:''' | '''The user manual and contact information can be found in LabManager:''' |
Revision as of 10:33, 22 August 2023
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Pegasus 4 - 150mm silicon oxide and silicon nitride etching
The user manual and contact information can be found in LabManager:
DRIE Pegasus 4 in LabManager - requires login
Process information
Standard recipes
- Barc Etch
- SiO2 Etch
- Nitride etch with SiO2 etch recipes
- Slow etch of silicon nitride and silicon oxide
Wafer bonding
To find information on how to bond wafers or chips to a carrier wafer, click here.