Specific Process Knowledge/Lithography/EBeamLithography/BEAMER: Difference between revisions
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===Fracture=== | ===Fracture=== | ||
Before pattern writing the polygons of a design must be fractured into trapezoids filled with beam/shot positions. Careful setup of how a design is fractured and shots are placed can greatly enhance the end result both in terms of critical dimension accuracy, line edge roughness and pattern stitching between writing fields. The ''Fracture'' node has three main panes, ''General'', ''Advanced'' and ''Fields'' (if using ''Flat with Fields''). The options found on the ''General'' pane are: | Before pattern writing the polygons of a design must be fractured into trapezoids filled with beam/shot positions. Careful setup of how a design is fractured and shots are placed can greatly enhance the end result both in terms of critical dimension accuracy, line edge roughness and pattern stitching between writing fields. The ''Fracture'' node has three main panes, ''General'', ''Advanced'' and ''Fields'' (if using ''Flat with Fields''). | ||
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The ''General'' pane of the ''Fracture'' node. | |||
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The options found on the ''General'' pane are: | |||
''Maintain grid:'' Check this to fracture at the database grid size, in most cases 1 nm. If unchecked the fracturing resolution can be changed in the ''Resolution'' field. The fracture resolutions should be set to the writing grid resolution, in most cases 1 nm. | ''Maintain grid:'' Check this to fracture at the database grid size, in most cases 1 nm. If unchecked the fracturing resolution can be changed in the ''Resolution'' field. The fracture resolutions should be set to the writing grid resolution, in most cases 1 nm. | ||
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*''Symmetric Fracturing:'' This will attempt to perserve as high symmetry across the x- and y-axis as possible. | *''Symmetric Fracturing:'' This will attempt to perserve as high symmetry across the x- and y-axis as possible. | ||
*''Subfield Fracturing:'' Will force any fracture field to be smaller or equal to the subfield size. The subfield size is controlled on the ''Fields'' pane and on the JEOL 9500 system the maximum subfield size is 4 µm. | *''Subfield Fracturing:'' Will force any fracture field to be smaller or equal to the subfield size. The subfield size is controlled on the ''Fields'' pane and on the JEOL 9500 system the maximum subfield size is 4 µm. | ||
''Interactive Resorting of Fields:'' This will allow the user to manually determine the field writing order. | ''Interactive Resorting of Fields:'' This will allow the user to manually determine the field writing order. | ||