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Specific Process Knowledge/Lithography/EBeamLithography/BEAMER: Difference between revisions

Thope (talk | contribs)
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| Grid || Can be used to increase layout grid and reduce geometry vertice count
| Grid || Can be used to increase layout grid and reduce geometry vertice count
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| Mapping ||  
| Mapping || Used to rename layers
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| Filter ||  
| Filter || Used to select geometry based on rules, for instance by dimensions
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| Fracture ||  
| Fracture || Gives the user much more control over pattern fracturing than the default export fracturing
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| ChipPlace || Graphical interface to set up arrays of patterns and assign dose to each element, excellent for dose testing
| ChipPlace || Graphical interface to set up arrays of patterns and assign dose to each element, excellent for dose testing
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| Visual-Job ||  
| Visual-Job || Graphical user interface that can be used to entirely setup a job and have Beamer write the SDF and JDF files
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| PEC || Used to apply Proximity Effect Correction to a pattern
| PEC || Used to apply Proximity Effect Correction to a pattern by dose modulation
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| Shape-PEC ||  
| Shape-PEC || Applies PEC by both dose modulation and shape modulation, i.e. by moving pattern edges
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| 3D-PEC ||  
| 3D-PEC || Can be used for PEC of thick resist layers for gray scale lithography or PEC on multi-resist layer structures
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| Corner-PEC ||  
| Corner-PEC || PEC with emphasis on creating sharp corners
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| FDA ||  
| FDA || Feature Dose Assignment, allows assignment of doses to pattern elements, regions or entire layers
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| Rule-OPC ||  
| Rule-OPC ||