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Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions

Pevo (talk | contribs)
Pevo (talk | contribs)
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*TiO<sub>2</sub>: 0 - 100 nm
*TiO<sub>2</sub>: 0 - 100 nm
*HfO<sub>2</sub>: 0 - 100 nm
*HfO<sub>2</sub>: 0 - 100 nm
<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also causes issues and with flakes and particles, which mean that the chamber and the pump line will have to cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same materials can be deposited using other machines in the cleanroom.</i>
<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range