Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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[[image:ALD.jpg|300x300px|right|thumb|ALD1, positioned in cleanroom F-2.]] | [[image:ALD.jpg|300x300px|right|thumb|ALD1, positioned in cleanroom F-2.]] | ||
The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub> (amorphous or anatase) and HfO<sub>2</sub> on different samples. | The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub> (amorphous or anatase) and HfO<sub>2</sub> on different samples. Layer can be up to 100 nm thick, see the table below. | ||
Each process is using two different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precursor is removed from the chamber before the next one is introduced. In that way, materials can be deposited atomic layer by atomic layer by ALD. | Each process is using two different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precursor is removed from the chamber before the next one is introduced. In that way, materials can be deposited atomic layer by atomic layer by ALD. | ||