Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions
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|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]] | |style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]] | ||
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Gemini_1|SEM Gemini 1]] | |style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Gemini_1|SEM Gemini 1]] | ||
<i>Under installation</i> | <i>Under installation (August 2023)</i> | ||
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1|SEM Tabletop 1]] | |style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1|SEM Tabletop 1]] | ||
<!--|style="background:WhiteSmoke; color:black" align="center"|[[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FEI Quanta 200 3D]] | <!--|style="background:WhiteSmoke; color:black" align="center"|[[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FEI Quanta 200 3D]] | ||
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* Retractable, column mounted six segment backscatter electron (aBSD) | * Retractable, column mounted six segment backscatter electron (aBSD) | ||
* Variable pressure secondary electron (VPSE) | * Variable pressure secondary electron (VPSE) | ||
* Retractable, four segment | * Retractable, four segment tranmitted electron (aSTEM) | ||
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* Secondary electron (Everhart-Thornley (ETD)) | * Secondary electron (Everhart-Thornley (ETD)) | ||
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* Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | * Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | ||
* Variable at Low vacuum | * Variable at Low vacuum | ||
** Standard VP (variable pressure): 5-60 Pa | ** Standard VP (variable pressure): 5-60 Pa | ||
** Nano VP, 350 um beamsleeve aperture: 5-150 | ** Nano VP, 350 um beamsleeve aperture: 5-150 Pa | ||
** Nano VP, 800 um beamsleeve aperture: 5-40 | ** Nano VP, 800 um beamsleeve aperture: 5-40 Pa | ||
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* Conductor vacuum mode: 5 Pa | * Conductor vacuum mode: 5 Pa | ||
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* All software options available | * All software options available | ||
* | * Electron magnetic noise cancellations system | ||
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* Antivibration platform | * Antivibration platform | ||
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* Antivibration platform | * Antivibration platform | ||
* | * Electron magnetic noise cancellations system | ||
* Zeiss airlock taking up to 6" wafers | * Zeiss airlock taking up to 6" wafers | ||
* Plasma cleaner | * Plasma cleaner | ||