Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions

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 The liquid precursors (H<sub>2</sub>O, TMA, TiCl<sub>4</sub> and TEMAHf) are located in the cabinet below the ALD chamber. When these precursors are not in use, the manual valves have to be closed. Only four of the precursors (normally <sub>2</sub>O, TMA, TEMAHf and TiCl<sub>4</sub>) can be connected at the same time. Ozone is generated by use of an ozone generator that is located on the side of the machine.
-As the purpose of ALD 1 is to deposit very thin and uniform layers, and because the deposition is very slow, the allowed deposition thickness is limited to 100 nm. It is not allowed to make more depositions in the same sample(s) to get a thicker layer. If you want to deposit a thicker layer than 100 nm, you need an approval from one of the responsible persons. It might also be possible to use other machines in the cleanroom for the deposition of the same materials.
 It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch (up to five wafers at a time) or a number of smaller samples. Samples are loaded manually into the sample holder by use of a tweezer. However, for some materials the uniformity will only be good for the top sample(s) in a minibatch holder.