Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

@@ Line 34: / Line 34: @@
 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Etchant
 |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_BHF_baths|BHF]]</b>
-|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_5.25_HF_baths|1% / 5% HF]]</b>
+|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_5.25_HF_baths|1% HF / 5% HF / 10% HF]]</b>
 |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#Comparing_different_40.25_HF_baths|40% HF]]</b>
 |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)#SiO_etch_bath|BOE 7:1 Etchant VLSI with Surfactant]]</b>
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 *Wet thermal oxide:75-80nm/min
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-*Wet thermal oxide:~6nm/min(1%) / 25nm/min(5%)
+*Wet thermal oxide:~6nm/min(1%) / 25nm/min(5%) / 52nm/min(10%)
 |style="background:WhiteSmoke; color:black"|
 *Boronfloat and quartz: ~3-4 μm/min