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Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions

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|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Gemini_1|SEM Gemini 1]]
<i>Under installation</i>
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1|SEM Tabletop 1]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1|SEM Tabletop 1]]
<!--|style="background:WhiteSmoke; color:black" align="center"|[[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FEI Quanta 200 3D]]
<!--|style="background:WhiteSmoke; color:black" align="center"|[[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FEI Quanta 200 3D]]
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|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 60 VP
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 60 VP
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP
|style="background:WhiteSmoke; color:black" align="center"| Zeiss GeminiSEM 560
|style="background:WhiteSmoke; color:black" align="center"| SEM Tabletop 1
|style="background:WhiteSmoke; color:black" align="center"| SEM Tabletop 1
<!--|style="background:WhiteSmoke; color:black" align="center"| FEI Quanta 200 3D-->
<!--|style="background:WhiteSmoke; color:black" align="center"| FEI Quanta 200 3D-->
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* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
* Thick polymers, glass or quartz samples
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*
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* Conducting samples
* Conducting samples
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* Surface material analysis using EDX
* Surface material analysis using EDX
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*Cleanroom of DTU Nanolab in building 346
*Cleanroom of DTU Nanolab in building 346
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*Cleanroom of DTU Nanolab
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*Building 451 - room 913
*Building 451 - room 913
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black" rowspan="2" align="center" |Resolution
|style="background:LightGrey; color:black" rowspan="2" align="center" |Resolution
|style="background:Whitesmoke; color:black" colspan="4" align="center"| The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
|style="background:Whitesmoke; color:black" colspan="5" align="center"| The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
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* 1-2 nm (limited by vibrations)
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* 1-2 nm (limited by vibrations)
* 1-2 nm (limited by vibrations)
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* Inlens secondary electron (Inlens)
* Inlens secondary electron (Inlens)
* High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)  
* High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)  
* Variable pressure secondary electron (VPSE)
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* Secondary electron (Se2)
* Inlens secondary electron (Inlens)
*
* Variable pressure secondary electron (VPSE)
* Variable pressure secondary electron (VPSE)
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* X, Y: 150 &times; 150 mm
* X, Y: 150 &times; 150 mm
* T: -10 to 70<sup>o</sup>  
* T: -10 to 70<sup>o</sup>  
* R: 360<sup>o</sup>
* Z: 50 mm
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* X, Y: 130 &times; 130 mm
* T: -4 to 70<sup>o</sup>
* R: 360<sup>o</sup>  
* R: 360<sup>o</sup>  
* Z: 50 mm
* Z: 50 mm
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|style="background:LightGrey; color:black" align="center" |Electron source
|style="background:LightGrey; color:black" align="center" |Electron source
|style="background:Whitesmoke; color:black" colspan="3" align="center"| FEG (Field Emission Gun) source
|style="background:Whitesmoke; color:black" colspan="4" align="center"| FEG (Field Emission Gun) source
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* Thermionic tungsten filament
* Thermionic tungsten filament
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|style="background:LightGrey; color:black" align="center" |Operating pressures
|style="background:LightGrey; color:black" align="center" |Operating pressures
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* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Variable at Low vacuum (0.1 mbar-2 mbar)
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* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
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*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
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* Antivibration platform
*
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* Up to 8" wafer with 6" view
* Up to 8" wafer with 6" view
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*  Up to 6" wafer with full view
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*  Up to 6" wafer with full view
*  Up to 6" wafer with full view
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* Any standard cleanroom material and samples from the Laser Micromachining tool and the Polymer Injection Molding tool
* Any standard cleanroom material and samples from the Laser Micromachining tool and the Polymer Injection Molding tool
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* Any standard cleanroom materials
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* Any standard cleanroom materials
* Any standard cleanroom materials