Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142: Difference between revisions
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===Etching SRN (Silicon Rich Nitride) with nano1.42=== | ===Etching SRN (Silicon Rich Nitride) with nano1.42=== | ||
''This test has been done by Leonid Beliaev'' <br> | |||
*274nm SRN by LPCVD ("6 inch LS" recipe) | |||
*Substrate: Si/SiO2(1100nm) | |||
*DUV-lithography: KRF M230Y resist 360 nm, Barc 65 nm, exposure dose 220J/m2 | |||
*Pattern: Grating with period 400 nm and grating bar width of | |||
*Barc etch in Pegasus 1 at -19 deg, 40s | |||
*Nano 1.42 at -19 deg, 5 min | |||