Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium: Difference between revisions
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==Chromium etch of hardmask for silicon nitride etching by Anders Simonsen@nbi.ku == | ==Chromium etch of hardmask for silicon nitride etching by Anders Simonsen@nbi.ku == | ||
'''This work was done by Anders Simonsen, KU''' and ''Added by bghe@Nanolab'' <br> | '''This work was done by Anders Simonsen, KU''' and ''Added by bghe@Nanolab'' <br> | ||
Anders has done some work on optimizing the Cr etch for at | Anders has done some work on optimizing the Cr etch for at 30 nm thick Cr that was to be used as masking for a 200nm silicon nitride etch. The Cr etch was carriered out on the ICP metal using 180 nm CSAR and the silicon nitride etch was done on the AOE. You can see his results in this summery that he has made: | ||
* [[Media:report_summer2022 Anders Simonsen bghe edits.pdf | Cr etch development report summery by Anders Simonesen, summer of 2022 ]] | * [[Media:report_summer2022 Anders Simonsen bghe edits.pdf | Cr etch development report summery by Anders Simonesen, summer of 2022 ]] | ||
* [[/Cr etch data from AS |Here are the raw test data and SEM images from Anders Simonsen]] | * [[/Cr etch data from AS |Here are the raw test data and SEM images from Anders Simonsen]] | ||
''' | '''Prefered result:''' | ||
The SEM images where done after both the Cr etch and the silicon nitride etch in the AOE using the recipe "SiN_AS". The important thing was to see how well the Cr works for masking the nitride given vertical and smooth sidewalls in the nitride. The thickness of the Cr was 40 nm | The SEM images where done after both the Cr etch and the silicon nitride etch in the AOE using the recipe "SiN_AS". The important thing was to see how well the Cr works for masking the nitride given vertical and smooth sidewalls in the nitride. The thickness of the Cr was 40 nm | ||