Specific Process Knowledge/Etch/DRIE-Pegasus/FAQ/Nanoetch: Difference between revisions
New page: ; Question : One of our 'popular' etches on the old ASE, a switched etch of nanostructures , is proving very difficult to transfer to the Pegasus. The structures are typically e-beam defin... |
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: One of our 'popular' etches on the old ASE, a switched etch of nanostructures , is proving very difficult to transfer to the Pegasus. The structures are typically e-beam defined channels or holes a few hundred nanometers wide and masked with 50-100 nm ZEP resist. The etch load is usually very low, less than a few | : One of our 'popular' etches on the old ASE, a switched etch of nanostructures , is proving very difficult to transfer to the Pegasus. The structures are typically e-beam defined channels or holes a few hundred nanometers wide and masked with 50-100 nm ZEP resist. The etch load is usually very low, less than a few percent. We would like to go as much as 1 µm down. (I have been on paternity leave during the summer and I am sitting at home with my son right now so I don't have/know the complete story but I will get it for you if needed.) Do you have a suggestion to a starting point for such an etch? | ||
percent. We would like to go as much as 1 µm down. (I have been on paternity leave during the summer and I am sitting at home with my son right now so I don't have/know the complete story but I will get it for you if needed.) Do you have a suggestion to a starting point for such an etch? | |||
; Answer | ; Answer | ||