Specific Process Knowledge/Thermal Process: Difference between revisions
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''This page is written by DTU Nanolab internal'' | ''This page is written by DTU Nanolab internal'' | ||
== Choose a process type == | == Choose a process type == | ||
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*[[/Dope with Phosphorus|Doping with Phosphorus]] | *[[/Dope with Phosphorus|Doping with Phosphorus]] | ||
*[[/Pyrolysis|Pyrolysis]] | *[[/Pyrolysis|Pyrolysis]] | ||
== Choose an equipment to use == | == Choose an equipment to use == | ||
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*[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing and smoothing of Si based materials'' | *[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing and smoothing of Si based materials'' | ||
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | *[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | ||
== Rules for storage and RCA cleaning of wafers to the A and C stack furnaces == | == Rules for storage and RCA cleaning of wafers to the A and C stack furnaces == | ||
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== Manual for the furnace computer to the A, B, C and E stack furnaces == | == Manual for the furnace computer to the A, B, C and E stack furnaces == | ||
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here | The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here in [https://labmanager.dtu.dk/function.php?module=MiscDocument&view=docs&page_id=387| LabManager] (login required): | ||
== Decommissioned equipment == | == Decommissioned equipment == | ||
Revision as of 08:55, 26 June 2023
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This page is written by DTU Nanolab internal
Choose a process type
- Oxidation - Grow a thermal oxide on silicon
- Annealing
- Doping with Boron
- Doping with Phosphorus
- Pyrolysis
Choose an equipment to use
A stack furnaces:
- Boron Drive-in + Predep furnace (A1) - For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards
- Gate Oxide furnace (A2) - Not in use
- Phosphorus Drive-in furnace (A3) - For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep
- Phosphorus Predep furnace (A4) - For pre-deposition (doping) of phosphorus on Si wafers
C stack furnaces:
- Anneal-oxide furnace (C1) - For oxidation and annealing of 100 mm and 150 mm wafers
- III-V oxidation furnace (C2) - For oxidation of AlxGaAs layers.
- Anneal-bond furnace (C3) - For oxidation and annealing of bonded wafers
- Aluminium Anneal furnace (C4) - For annealing of wafers containing aluminium, Al2O3 and TiO2
E stack furnaces:
- Oxidation (8") furnace (E1) - For oxidation and annealing of 150 mm and 200 mm wafers
Other furnaces:
- Furnace: Multipurpose annealing - For annealing, oxidation and resist pyrolysis
- RTP Jipelec 2 - For rapid thermal annealing of III-V materials and Si based materials
- RTP Annealsys - For rapid thermal annealing and smoothing of Si based materials
- BCB Curing oven - For resist curing and metal alloyinglayers
Rules for storage and RCA cleaning of wafers to the A and C stack furnaces
Manual for the furnace computer to the A, B, C and E stack furnaces
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here in LabManager (login required):
Decommissioned equipment
- RTP Jipelec - For rapid thermal annealing of III-V materials and Si based materials
- APOX furnace - For growing of very thick oxide layers
- III-V Oven (D4) - For oxidation of AlxGaAs layers.
- Resist Pyrolysis furnace - For pyrolysis of different resist
- Noble furnace - For annealing and oxidation of non-clean wafers