Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide: Difference between revisions

← Older editNewer edit →
VisualWikitext
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,764 edits
No edit summary
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,377 edits
No edit summary
Line 5: Line 5:


<br clear="all" />
<br clear="all" />
=Hafnium oxide (HfO₂)=
Hafnium oxide (HfO₂) is a wide‑bandgap, high‑κ dielectric (κ ≈ 20–25) valued for its large breakdown field, thermal/chemical stability, and excellent CMOS compatibility.
It is deposited by magnetron sputtering for dense optical and protective coatings, and by atomic layer deposition (ALD) when ultra-thin, conformal, and thickness-precise films are required on high-aspect-ratio structures, such as FinFETs, 3D NAND, and trench capacitors.
In semiconductors, it is the standard high‑κ gate dielectric in high‑κ/metal‑gate stacks, a capacitor dielectric in DRAM, a robust passivation/barrier layer, and the active switching medium in resistive RAM; doped or strain‑stabilized HfO₂ (e.g., with Zr, Si, Al) also exhibits ferroelectric/antiferroelectric phases, enabling FeFET non‑volatile memories and ferroelectric capacitors.
Optically, HfO₂ offers a high refractive index with low absorption from the UV through the NIR and a high laser-damage threshold, supporting durable anti-reflective/high-reflective multilayers, mirrors, protective windows, and waveguide or cavity coatings.
Beyond electronics and optics, its hardness, corrosion resistance, and radiation tolerance make it a worthwhile material for MEMS passivation, diffusion barriers, biocompatible protective layers, and harsh-environment coatings.
Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone thin-film material across semiconductor, photonic, and engineering applications.


== Deposition of Hafnium Oxide ==
== Deposition of Hafnium Oxide ==
Thin films of hafnium oxide, HfO<sub>2</sub>, can both be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.
Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated to nitride deposition.


More information about hafnium oxide deposition can be found here: for [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].
More information about hafnium oxide deposition can be found here: for [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Hafnium_Oxide"