Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide(PC1)]] | ![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide(PC1)]] | ||
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ||
![[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|10-pocket e-beam evaporator]] | |||
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*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | *ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | ||
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*E-beam evaporation of Al<sub>2</sub>O<sub>3</sub> pellets or of Al in an O<sub>2</sub> flow | |||
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*Al<sub>2</sub>O<sub>3</sub>, very good | *Al<sub>2</sub>O<sub>3</sub>, very good | ||
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*Not tested yet | |||
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* 0nm - 100 nm | * 0nm - 100 nm | ||
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*few nm - 200 nm (talk to staff if you wish to deposit more than 100 nm as it can cause flaking in the chamber) | |||
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*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | *0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | ||
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* 1-2 Å/s | |||
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*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | *Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | ||
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*expect no or very little step coverage | |||
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* Up to 600 °C | * Up to 600 °C | ||
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*150 °C - 350 °C | *150 °C - 350 °C | ||
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* Up to 250 °C | |||
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*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | *[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | ||
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*1-5 150 mm wafers | *1-5 150 mm wafers | ||
*Several smaller samples | *Several smaller samples | ||
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* chips | |||
* 1-3 x 100 mm wafers | |||
* 1-3 x 150 mm wafers | |||
* 1-3 x 200 mm wafers | |||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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*almost any | *almost any that does not degas | ||
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*almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]. | *almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]. | ||
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*III-V materials (use dedicated carrier wafer) | *III-V materials (use dedicated carrier wafer) | ||
*Polymers (depending on the melting point/deposition temperature, use carrier wafer) | *Polymers (depending on the melting point/deposition temperature, use carrier wafer) | ||
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*almost any that does not degas. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet] | |||
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