Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

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	*Optimization of a inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures, ''by S. Guilet, S. Bouchoule, C. Jany, C. S. Corr, and P. Chabert'', Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 24, 2381 (2006); doi: 10.1116/1.2348728		*Optimization of a inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures, ''by S. Guilet, S. Bouchoule, C. Jany, C. S. Corr, and P. Chabert'', Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 24, 2381 (2006); doi: 10.1116/1.2348728

			*Investigation of InP etching mechanisms in a inductively coupled plasma by optical emission spectroscopy, ''by L. Gatilova, S. Bouchoule, S. Guilet, and P. Chabert'', Journal of Vacuum Science & Technology A 27, 262 (2009); doi: 10.1116/1.3071950