Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions
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ER 200 nm/min, 3:1 over resist. Vertical profile. To improve selectivity to oxide under-layers you can add a small amount of O2 ( e.g 2 sccm if the MFC is small enough). This should not give an undercut. | ER 200 nm/min, 3:1 over resist. Vertical profile. To improve selectivity to oxide under-layers you can add a small amount of O2 ( e.g 2 sccm if the MFC is small enough). This should not give an undercut. | ||
<gallery caption=" | <gallery caption="First tests of the nanoetch recipe" widths="300px" heights="300px" perrow="2"> | ||
Image:WF 2F-6_dec092010-30_nm.jpg|The 30 nm trenches are somewhat wider due to overexposure of E-beam resist | Image:WF 2F-6_dec092010-30_nm.jpg|The 30 nm trenches are somewhat wider due to overexposure of E-beam resist | ||
image:WF 2F-6_dec092010-120_nm.jpg|The 30 nm trenches are somewhat wider due to overexposure of E-beam resist | image:WF 2F-6_dec092010-120_nm.jpg|The 30 nm trenches are somewhat wider due to overexposure of E-beam resist | ||