Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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-=== s ===
-Two recipes have been optimized for the ASE. Their specification is on a 10 % etch load wafer with trenches.
-* '''Shallolr''': The shallow etch process will etch a 2 <math>\mu</math>m opening down to make a 20 <math>\mu</math>m trench.
-* '''Deepetch''': The deep etch process will etch a 50 <math>\mu</math>m opening down to make a 300 <math>\mu</math>m trench.
-The standardization procedure on the ASE covers these two etches.
-== Recipes on the ASE ==
-=== Shallolr ===
-The shallolr recipe is designed to etch features (with sizes above 1 <math>\mu</math>m) in silicon down to a depth that ranges from a few microns to some 50 microns. (If you need to etch deeper use Deepetch or more shallow, see Nanoetches.) It is specified to etch a 2 <math>\mu</math>m wide trench down to a depth of 20 <math>\mu</math>m on a wafer that has a global/local etch opening density of 10%.
-The recipe is given below.
 {| border="2" cellpadding="2" cellspacing="1"
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 ! rowspan="6" align="center"| Main
 | Gas
-| Cl<sub>2</sub> 20 sccm
+| HBr 20 sccm
 |-
 | Pressure
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 |-
 | Power
-| 600 W CP, 200 W PP
+| 900 W CP, 50 W PP
 |-
 | Temperature
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 |-
 | Time
-| 15 secs
+| ? secs
 |-
 |}
+ER 200 nm/min,  3:1 over resist.  Vertical profile.   To improve selectivity to oxide under-layers you can add a small amount of O2   ( e.g 2 sccm  if the MFC is small enough).    This should not give an undercut.
-The process runs for 31 cycles (5:56 mins). The fact that it's Bosch process is clear from the scallops on the sidewalls - one should be able to count 31 of them.
 <gallery caption="Standardization images of the shallolr recipe" widths="300px" heights="300px" perrow="2">