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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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! PECVD ([[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]])
! PECVD ([[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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! General description
! General description


|LPCVD (low pressure chemical vapour deposition) of a-Si and poly-Si
| LPCVD (low pressure chemical vapour deposition) of a-Si and poly-Si
|Plasma Enhanced Chemical Vapor Deposition of Si
| Plasma Enhanced Chemical Vapor Deposition of Si
 
| Sputter deposition of Si.
| Sputter deposition of Si.
| Ion beam sputter deposition of Si.
| Sputter deposition of Si.  
| Sputter deposition of Si.  
| Sputter deposition of Si.  
| Sputter deposition of Si.  
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|Yes, B (boron) and P (phosphorus)
|Yes, B (boron) and P (phosphorus)
|Yes, B and P
|Yes, B and P
|None
|None
|None
|None
|None
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| 
| 
|RF Ar clean available
|RF Ar clean available
|None
|RF Ar clean available
|RF Ar clean available
|RF Ar clean available
|RF Ar clean available
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|few nm to ~ 600 nm
|few nm to ~ 600 nm
|few nm to ~ 300 nm
|few nm to ~ 300 nm
|No defined limits
|few nm to >200 nm  
|few nm to >200 nm  
|few nm to ?
|few nm to ?
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|
|
On the order of 1 Å/s dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
On the order of 1 Å/s dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
| About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
| Depends on process parameters, roughly 0.2-2 Å/s. See Process Log.
| Depends on process parameters, roughly 0.2-2 Å/s. See Process Log.
|Depends on process parameters, at least 0.3 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|Depends on process parameters, at least 0.3 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
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|560 °C (amorphous) and 620 °C (poly)
|560 °C (amorphous) and 620 °C (poly)
|300 °C
|300 °C
|close to room temperature
|Platen: 5-60 °C
|Wafers can be heated to 400 °C  
|Wafers can be heated to 400 °C  
|Wafers can be heated to 600 °C  
|Wafers can be heated to 600 °C  
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|Medium
|Medium
|Medium
|Medium
|Not known
|Medium
|Medium
|Medium - may be possible to improve using HIPIMS
|Medium - may be possible to improve using HIPIMS
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|Not tested, but do not deposit on top of silicon
|Not tested, but do not deposit on top of silicon
| 
| 
|Not tested
| 
| 
| 
| 
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*6x 4" wafers or
*6x 4" wafers or
*6x 6" wafers
*6x 6" wafers
| 
 
* Several small samples mounted with capton tape
* 1x 50 mm wafer
* 1x 100 mm wafer
* 1x 150 mm wafer
* 1x 200 mm wafer
|
|
* Up to 1x6" wafers
* Up to 1x6" wafers
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*See the cross contamination sheets
*See the cross contamination sheets
|   
|   
* Silicon wafers
*Almost any that does not degas.
* Quartz wafers
* Pyrex wafers
|
*Same materials as on the allowed materials below
|
|
* Almost any that does not degas, see cross-contamination sheet
* Almost any that does not degas, see cross-contamination sheet
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*See the cross contamination sheets
*See the cross contamination sheets
|     
|     
* Silicon oxide
* Almost any that does not degas.
* Silicon (oxy)nitride
 
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon, silicon oxides, silicon nitrides
* Metals from the +list and the -list on the cross-contamination sheet
* Alloys from the above list
* Stainless steel
* Glass
* III-V materials
* Resists
* Polymers
* Capton tape
|     
|     
*Almost any that does not degas, see the cross-contamination sheet
*Almost any that does not degas, see the cross-contamination sheet
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|Only in PECVD3
|Only in PECVD3
|  
|  
| The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD.
|
|
|  
|  
|}
|}
Historical note: It was previosly possible to deposit Si with our [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300| IonFab 300]]. You can read about the deposition conditions and results from that [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si|here]].
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