Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

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The APOX furnace has been decomissioned in August 2019.

Apox furnace (D1)

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075^oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.

The user manual, technical information and contact information can be found in LabManager:

APOX Furnace (D1)

Process knowledge

Oxidation: look at the Oxidation page

Overview of the performance of the Apox furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Wet: With bubbler (water steam + O₂)
Performance	Film thickness	Wet oxide: Thicker than > 5 µm (APOX layers)
Process parameter range	Process Temperature	1075 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 0-10 slm O₂: 0-10 slm
Substrates	Batch size	1-200 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box)

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-===<span style="color:Red">EXPIRED - The APOX furnace has been removed from the cleanroom August 2019.</span>===
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 [[Category: Thermal process|APOX]]
 [[Category: Furnaces|APOX]]
 ==Apox furnace (D1)==