Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation: Difference between revisions
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Dry etched silicon trenches come in many sizes and shapes. In most cases the best way of characterizing them is to cleave the wafer perpendicularly to the trench and inspect the profile in an SEM or optical microscope. The SEM provides by far the best information as there are no challenges with limited depth of focus or image resolution. The work of adding measurements to SEM images, collecting the data and making sure that it is complete is, however, tedious. | Dry etched silicon trenches come in many sizes and shapes. In most cases the best way of characterizing them is to cleave the wafer perpendicularly to the trench and inspect the profile in an SEM or optical microscope. The SEM provides by far the best information as there are no challenges with limited depth of focus or image resolution. The work of adding measurements to SEM images, collecting the data and making sure that it is complete is, however, tedious. | ||
== | == Using Matlab scripts == | ||
A Matlab script automating the measurements from SEM images has been developed. It follows the sequence: | |||
# '''Input parameters''': The information required in terms of | |||
## Date | |||
## Wafer info: Substrate size, conditions, mask material and thickness | |||
## Material etched, exposed area | |||
## Recipe: | |||
Many users make measurements using the annotations in the SEM. Either top view measurements of heights/widths or tilted samples | Many users make measurements using the annotations in the SEM. Either top view measurements of heights/widths or tilted samples | ||