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Specific Process Knowledge/Lithography/EBeamLithography/JEOLJobPreparation: Difference between revisions

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=Alignment exposure - direct exposure mode=
=Alignment exposure - direct exposure mode=
As described in the pattern preparation section there is two different strategies for pattern alignment. One can expose a wafer scale layout based on two global alignment marks or one can do chip exposures where each chip is individually aligned to an individual chip mark, as illustrated below.
As described in the pattern preparation section there is two different strategies for pattern alignment. One can expose a wafer scale layout based on two global alignment marks or one can do chip exposures where each chip is individually aligned to an individual chip mark, as illustrated below. In both cases the SDF and JDF files have to be expanded with additional features to call and define the alignment procedure. Below is two examples, one for global alignment and one for chip alignment. Only new commands relative to the above example will be commented.


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==Global alignment - schedule file==
==Global alignment - schedule file==
The following file has additional features for global alignment.
<pre>
MAGAZIN    'ELELOP'
;------------------------------------------------------------
#8                           
% 4A                         
JDF    '21031L2',1 ;JDF file containing the array of doses with PEC
ACC 100                       
CALPRM '6na_ap5'          ;Giving a beam spot of ca. 38nm, if larger needed can use 60na giving 55nm beam spot     
DEFMODE 2                   
GLMDET A ; This line defines which type of alignment is done A =  automatic, M = manual or S = semiatuomatic
CHIPAL 0 ; Tells how many marks are used for the chip alignment. 1 if only top-left mark, 4 if 4 marks starting from the top-left and clockwise doing the rest
HSWITCH OFF,OFF
RESIST 152                  ;According to process flow this is the base dose to be used (200um/cm2) . Modulation included in jdf file
SHOT A,32                  ;In units of 0.25nm, this means a step of 13nm (this small needed? check dwell time)   
OFFSET(0,0)                 
; Repeat above in case of more than one slot to expose
END 8 ; Or next user's cassette :) Be nice!
</pre>


==Global alignment - jobdeck file==
==Global alignment - jobdeck file==
<pre>
JOB/W    'ELELOP',4  ; 4inch wafer
GLMPOS P =(-36000,0), Q=(36000,0) ; Position of the alignment Global Marks, give the coordinates of their position first the left one (P) and then the right one (Q)
GLMP 2, 450,0,0 ; Type of mark it is looking for. The information is given by the line width, and the leg length and 0,0 in case of using a cross that is not rotated
PATH DRF5M
  ARRAY (0,1,0)/(0,1,0) ;
ASSIGN P(1) -> ((*,*),MOD001) ;
  AEND
PEND
LAYER 1
P(1)  'elelop_GIST_L2.v30'
SPPRM 4.0,,,,1.0,1
STDCUR  6.6  ; x nA + 10% ; CHANGE
OBJAPT 5
       
MOD001: MODULAT (( 0, -1.0 ) , ( 1,  0.0 ) , ( 2,  1.0 )
-    , ( 3,  2.0 ) , ( 4,  3.0 ) , ( 5,  4.1 )
-    , ( 6,  5.1 ) , ( 7,  6.2 ) , ( 8,  7.2 )
-    , ( 9,  8.3 ) , ( 10,  9.4 ) , ( 11, 10.5 )
-    , ( 12, 11.6 ) , ( 13, 12.7 ) , ( 14, 13.8 )
-    , ( 15, 14.9 ) , ( 16, 16.1 ) , ( 17, 17.3 )
-    , ( 18, 18.4 ) , ( 19, 19.6 ) , ( 20, 20.8 )
-    , ( 21, 22.0 ) , ( 22, 23.2 ) , ( 23, 24.5 )
-    , ( 24, 25.7 ) , ( 25, 27.0 ) , ( 26, 28.2 )
-    , ( 27, 29.5 ) , ( 28, 30.8 ) , ( 29, 32.1 )
-    , ( 30, 33.5 ) , ( 31, 34.8 ) , ( 32, 36.1 )
-    , ( 33, 37.5 ) , ( 34, 38.9 ) , ( 35, 40.3 )
-    , ( 36, 41.7 ) , ( 37, 43.1 ) , ( 38, 44.5 )
-    , ( 39, 46.0 ) , ( 40, 47.4 ) , ( 41, 48.9 )
-    , ( 42, 50.4 ) , ( 43, 51.9 ) , ( 44, 53.4 )
-    , ( 45, 54.9 ) , ( 46, 56.5 ) , ( 47, 58.1 )
-    , ( 48, 59.6 ) , ( 49, 61.2 ) , ( 50, 62.8 )
-    , ( 51, 64.5 ) , ( 52, 66.1 ) , ( 53, 67.8 )
-    , ( 54, 69.4 ))
; JDI file values for PEC
END
</pre>


=Beam pitch, beam current and exposure dose relationship=
=Beam pitch, beam current and exposure dose relationship=