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Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,915 edits
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'''Result of using "Expose with Global Angle":'''  
'''Result of using "Expose with Global Angle":'''  
*Rotation: 0.05±0.2°
*Rotation: 0.05 ±0.2°
*Centering:
*Centering:
** '''X''' -125±25µm
** '''X''' -125 ±25 µm
** '''Y''' 104±36µm
** '''Y''' 104 ±36 µm
Jehem Feb 2020, average of 3 4" wafers.
Jehem Feb 2020, average of 3 100 mm wafers.




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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Jehem Feb 2020
|Jehem Feb 2020
| 3.6 mRad
| 3.6 mrad
| ±1.4 mRad
| ±1.4 mrad
±0.08°
±0.08°


Line 139: Line 139:




As expected from Aligner Maskless 01 and 02, the accuracy of flat alignment is ±0.1°, and the substrate centering is within a couple of hundred µm.
As expected from MLA1 and MLA2, the accuracy of flat alignment on MLA3 is ±0.1°, and the substrate centering is within a couple of hundred µm.


==Labeling==
==Labeling==
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