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Specific Process Knowledge/Lithography/EBeamLithography/JEOL 9500 User Guide: Difference between revisions

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== Rough estimation of exposure time ==
== Rough estimation of exposure time ==
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span>
The writing time should always be estimated prior to an exposure session. The writing time ''t'' [s] is a function of exposure dose ''Q'' [C/cm<sup>2</sup>], pattern area ''A'' [m<sup>2</sup>] and beam current ''I'' [A], as given below:


Pattern writing using the e-beam writer is implemented on a wafer or chip which has been coated with an electron sensitive resist. Both positive and negative types of resists for pattern writing can be used. In either case, the resist sensitivity Q (C/cm2) is a function of the beam current, I (A), the pattern writing area, A (cm2), and the pattern writing time t (s), as given below:
''t = QA/t''
 
Q = It/A


The e-beam scanning frequency f (Hz) is a function of the e-beam scanning step, p (shot step), as shown below:
The e-beam scanning frequency f (Hz) is a function of the e-beam scanning step, p (shot step), as shown below:
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