Specific Process Knowledge/Lithography/EBeamLithography/JEOLJobPreparation: Difference between revisions
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The shot time can be calculated as ''t = D·p<sup>2</sup>/I'', where ''D'' is the dose in µC/cm<sup>2</sup>, ''p'' is beam pitch and ''I'' is current. As a practical example let us consider an exposure at 2 nA beam current and a desired dose of 250 µC/cm<sup>2</sup>. At 4 nm beam pitch the shot time will come out to 20 ns, while at 2 nm beam pitch it will come out at 5 ns and thus violate the hardware limitation of 10 ns. In order to expose the pattern with 2 nm shot pitch one would have to choose a lower beam current at the expense of increased writing time. | The shot time can be calculated as ''t = D·p<sup>2</sup>/I'', where ''D'' is the dose in µC/cm<sup>2</sup>, ''p'' is beam pitch and ''I'' is current. As a practical example let us consider an exposure at 2 nA beam current and a desired dose of 250 µC/cm<sup>2</sup>. At 4 nm beam pitch the shot time will come out to 20 ns, while at 2 nm beam pitch it will come out at 5 ns and thus violate the hardware limitation of 10 ns. In order to expose the pattern with 2 nm shot pitch one would have to choose a lower beam current at the expense of increased writing time. | ||
Start estimation writing time ----- | |||
Shot counting start ----- | |||
thopeQU23008a.v30 at 11-MAR-2023 14:53:40 | |||
Shot counting end ----- | |||
Seq. writing time shottime[nsec] resist[uC/cm2] stdcur[nA] scanstep | |||
1 0:52:27 16.000 200.000 2.000 16 | |||
2 0:13:46 13.500 200.000 12.000 36 | |||
3 0:11:15 12.000 100.000 12.000 48 | |||
4 0:12:10 13.500 200.000 12.000 36 | |||
5 0:11:14 12.000 100.000 12.000 48 | |||
Total : 1:40:51 | |||
Estimation result file : thopeQU23008a.csv | |||
End estimation writing making time ----- | |||