Specific Process Knowledge/Lithography/EBeamLithography/BEAMER: Difference between revisions
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*Choose '''Raster X''' in '''Deploy Mode''' to increase dose from left to right for all rows | *Choose '''Raster X''' in '''Deploy Mode''' to increase dose from left to right for all rows | ||
*Click '''OK''' in both open windows to see the result | *Click '''OK''' in both open windows to see the result | ||
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;" | |||
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| [[image:BEAMER_3.png|800px]] | |||
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The array and dose assignment can be set up with just a few inputs. Image: Thomas Pedersen. | |||
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This will produce a 10 x 2 array of the pattern with a relative dose from 1 to 2. Remember this dose is acting as a multiplier onto the base dose defined by '''RESIST''' in the SDF file. Thus if a base dose of 200 is defined by '''RESIST''' this setup will start at 200 µC/cm<sup>2</sup> and end at 400 µC/cm<sup>2</sup>. | This will produce a 10 x 2 array of the pattern with a relative dose from 1 to 2. Remember this dose is acting as a multiplier onto the base dose defined by '''RESIST''' in the SDF file. Thus if a base dose of 200 is defined by '''RESIST''' this setup will start at 200 µC/cm<sup>2</sup> and end at 400 µC/cm<sup>2</sup>. | ||