Specific Process Knowledge/Lithography/EBeamLithography/BEAMER: Difference between revisions
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*Choose '''Dose Series''' and enter a start and end value. This is relative dose, i.e. a multiplier on the base dose defined by RESIST in the SDF file | *Choose '''Dose Series''' and enter a start and end value. This is relative dose, i.e. a multiplier on the base dose defined by RESIST in the SDF file | ||
*Choose '''Raster X''' in '''Deploy Mode''' to increase dose from left to right for all rows | *Choose '''Raster X''' in '''Deploy Mode''' to increase dose from left to right for all rows | ||
This will produce a 10 x 2 array of the pattern with a relative dose from 1 to 2. Remember this dose is acting as a multiplier onto the base dose defined by '''RESIST''' in the SDF file. Thus if a base dose of 200 is defined by '''RESIST''' this setup will start at 200 µC/cm<sup>2</sup> and end at 400 µC/cm<sup>2</sup>. | |||
To make analysis of the post exposure result easier let us add a dose label to each array element. This dose label will be exposed along with the pattern and thus when inspecting the result in SEM the dose will be visible next to the pattern. It is very easy to add: | |||
*Go to the '''Texts''' pane in the bottom window | |||
*Enter '''$DOSE_REL(3)$''' to have the relative dose printed with 3 decimals accuracy | |||
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