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Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions

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For our example process we will use a standard 4” silicon wafer and coat it with 180 nm CSAR on the fully automatic Gamma E-beam & UV coater using recipe 4318. [https://youtu.be/3JhM3rmLVpA A video demonstrating usage of our Gamma coaters can be found here.] Bear in mind the video shows the UV resist coater and not the E-beam resist coater but they are identical in operation.
For our example process we will use a standard 4” silicon wafer and coat it with 180 nm CSAR on the fully automatic Gamma E-beam & UV coater using recipe 4318. [https://youtu.be/3JhM3rmLVpA A video demonstrating usage of our Gamma coaters can be found here.] Bear in mind the video shows the UV resist coater and not the E-beam resist coater but they are identical in operation.


<gallery caption="Standardization images of the deepetch recipe" widths="517px" heights="300px" perrow="1">
Image:TPE02755.jpg|The profile of a 2 µm trench
</gallery>


[[File:TPE02755.jpg|center|517px|thumb|Full automatic Gamma UV + E-beam spin coater. Photo: Thomas Pedersen]] <br>
[[File:TPE02755.jpg|center|517px|Full automatic Gamma UV + E-beam spin coater. Photo: Thomas Pedersen]]
 
 
[[File:TPE02755.jpg|center|517px|Full automatic Gamma UV + E-beam spin coater. Photo: Thomas Pedersen]] <br>


=Pattern preparation=
=Pattern preparation=